Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film
نویسندگان
چکیده
[*] Prof. Y. Zhang, X. M. Zhang Department of Materials Physics and Chemistry State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing 100083 (PR China) E-mail: [email protected] Prof. Z. L. Wang, X. M. Zhang, M. Y. Lu School of Materials Science and Engineering Georgia Institute of Technology Atlanta, Georgia 30332-0245, (USA) E-mail: [email protected] Prof. L. J. Chen, M. Y. Lu Department of Materials Science and Engineering National Tsing Hua University Hsinchu, Taiwan 30043, (ROC)
منابع مشابه
Vertical Nanowire Array-Based Light Emitting Diodes
Address correspondence to [email protected] ABSTRACT Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin fi lm grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin fi lm through a simple low temperature solution method. The fabricated devices ex...
متن کاملElectroluminescence of ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes
This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...
متن کاملOxide nanowire arrays for light-emitting diodes and piezoelectric energy harvesters*
As an outstanding member in the oxide nanowire family, ZnO nanowire is widely studied for its optical, semiconductive, and piezoelectric properties. PbZrxTi1–xO3 (PZT), usually in the form of polycrystalline thin films, is known for its high piezoelectric coefficient and is an ideal material as actuator. In this review, we first briefly introduce the rational growth of ZnO and PZT nanowire arra...
متن کاملOrdered nanowire array blue/near-UV light emitting diodes.
ZnO-based light emitting diodes (LEDs) have been considered as a potential candidate for the next generation of blue/ near-UV light sources, [ 1 ] due to a direct wide bandgap energy of 3.37 eV, a large exciton binding energy of 60 meV at room temperature, and several other manufacturing advantages of ZnO. [ 2 ] While the pursuit of stable and reproducible p-ZnO is still undergoing, [ 3,4 ] het...
متن کاملZnO Nanowire/p-GaN Heterojunction LEDs
This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...
متن کامل